Fujitsu’s first triple-stacked MCP for cellular telephones integrates Flash memory, mobile FCRAM and SRAM Tuesday 31 July 2001 PDF Print London, July 31, 2001 – Fujitsu has announced the industry’s first triple-stacked multi-chip package (MCP), combining 64Mbit NOR-type Flash memory and 16Mbit mobile Fast-Cycle Random Access Memory (FCRAM) with an asynchronous SRAM-type interface, and 4Mbit SRAM. Recent advances in mobile-phone technology have expanded cellular-telephone functions to include capabilities such as web browsing and downloading of Java applets, generating demand for increased memory and higher speeds. The triple-stacked MCP addresses these new demands by packaging together Flash memory for program and data storage, high data-capacity FCRAM as working memory, and SRAM as cache memory for backup storage when downloading data or when the device is in standby mode. This combination enables efficient memory usage to accommodate greater functionality and data capacity in cellular telephones. The MCP also achieves a reduction in the amount of power used by the combined memory chips and minimises the number of parts and amount of wiring required by the common x 16 configured data buses. The 85 ball Plastic Ball Grid Array (PBGA) package measures 10.4mm x 10.8mm x 1.3mm, slightly slimmer than conventional MCPs. By combining three chips into one, it uses 30% less board area than previous devices. The new MB84VR5E3J1A1 offers an address access/program (1 word) time of 85ns max, a standard NOR-type Flash memory access time of 80ns, a mobile FCRAM random read access time of 90ns max and an SRAM read access time of 85ns max. The MCP operates from a 2.7V to 3.1V supply and offers low power consumption and power-saving facilities. In standby mode the Flash memory has a consumption of 5µA max, the FCRAM 70µA max and the SRAM 7µA max. In power-saving mode the FCRAM consumes just 10µA. The maximum current consumption of the Flash memory in read operation is 18mA at 5 MHz. For the FCRAM it is 20mA at 11MHz and for the SRAM 40mA at 10MHz. During write/erase operations the NOR-type Flash memory offers a current consumption 40mA and an extended life of 100,000 cycles. The MB84VR5E3J1A is now available in sample quantities with volume production commencing in September this year. FCRAM is a trademark of Fujitsu Limited. Other product names and proper nouns are trademarks or registered trademarks of the respective companies. This product information is also available on the WWW at: http://www.fme.fujitsu.com/news/press/start.php3 A low resolution picture relevant to this press release can be found by following the link: ftp://ftp.jdk.co.uk/Fujitsu/Press/MRPR732.jpg For a high resolution download option please follow the link: ftp://ftp.jdk.co.uk/Fujitsu/Press/HRPR732.zip Further information on Fujitsu Microelectronics Europe’s products is available on our new WWW address at: http://www.fme.fujitsu.com ISSUED ON BEHALF OF: Fujitsu Microelectronics Europe Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany Tel: +49-6103-690257 Fax: +49-6103-690122 E-mail: email@example.com Contact: Jim Bryant MORE INFORMATION FROM: JDK Marketing Communications The Old Granary Squerryes Goodley Stock Road Westerham, Kent TN16 1SL Tel: 01959 562772 Fax: 01959 562800 E-mail: firstname.lastname@example.org Contact: Frank Cornell This press release was distributed by ResponseSource Press Release Wire on behalf of JDK Marketing Communications in the following categories: Consumer Technology, Personal Finance, Business & Finance, Computing & Telecoms, for more information visit https://pressreleasewire.responsesource.com/about.