Fujitsu Limited and Fujitsu Microelectronics Europe GmbH (FME) have announced two new Mobile FCRAM devices based on the company’s Fast Cycle RAM (FCRAM) architecture. The new Mobile FCRAMs, “MB82DBS02163C” and “MB82DBS04163B”, are the first to adopt Burst Mode for both the Read and Write operations, with compliance to “Common Specification for Mobile RAM (COSMORAM)”, as recently announced by Fujitsu Limited, NEC Electronics Corporation and Toshiba Corporation.
The new devices, designed for use in 3rd generation mobile phones, offer such facilities as built-in digital camera, video data streaming and other multimedia services to satisfy the growing memory requirements of advanced infrastructure and high data rates demanded by mobile cellular technologies.
They adopt Burst Mode operation, compatible to Burst Read operation of Flash memory of which consecutive Read operations are synchronised to system clock. In addition to Burst Read operation, FCRAMs realise Burst Write operation. The Burst Mode of FCRAMs provides enhanced performance compared with Page Mode devices. The devices are initially operational in Page Mode after power on and are user configurable to Burst Mode. Therefore, these devices retain functionality inherent in today’s design infrastructure. Over and above the improvement on Read and Write access, power consumption is also improved. User configurable Partial Power Down Mode is available, which allows users to optimise design for longer battery life.
These new devices will be available in monolithic and multi-chip packages together with Fujitsu Flash memory, or in wafer form for embedded
applications. Future versions will expand Burst frequency up to 100MHz as well as densities up to 128Mbit. This announcement underlines Fujitsu’s commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.
Part Number MB82DBS02163C MB82DBS04163B
Density 32M bit 64M bit
I/O Configuration x16 x16
Supply Voltage 1.65V to 1.95V 1.65V to 1.95V
Burst Frequency 66MHz (@RL=5) 66MHz (@RL=5)
Initial Access Time 70ns 70ns
Clock Access Time 12ns 12ns
Page Access Time 20ns 20ns
VDD Active Current 30mA 30mA
VDD Standby Current 80µA 120µA
VDD Power Down Current 10µA 10µA
FCRAM is a trademark of Fujitsu Limited in Japan.
…ends (Ref: 014053-08/PR783)
ISSUED ON BEHALF OF:
Fujitsu Microelectronics Europe
Contact: Jim Bryant
MORE INFORMATION FROM:
JDK Marketing Communications
Tel: 01959 562772
Contact: Joanna Muggeridge
This press release was distributed by ResponseSource Press Release Wire on behalf of JDK Marketing Communications in the following categories: Consumer Technology, Personal Finance, Business & Finance, Computing & Telecoms, for more information visit https://pressreleasewire.responsesource.com/about.