Fujitsu Introduces New 128Mbit Mobile FCRAM Complying with COSMORAM Rev.3
Munich, November 9th 2004 – Fujitsu Microelectronics Europe today announced the sample availability of a new 128Mbit Mobile Fast Cycle RAMTM device that adopts burst mode operations complying with Common Specifications for Mobile RAM (COSMORAM) Revision 3, for use in mobile phone applications. The device's high-speed performance and large density make it ideal for 3G mobile phone vendors looking to provide advanced applications.
The new 128Mbit device “MB82DBS04314C” and “MB82DBS08164C” achieves maximum burst operation frequency of up to 108MHz with a single 1.8V supply voltage, which satisfies the memory requirement for next generation mobile phone applications. The device provides a high data transfer rate as burst mode enables fast successive read/write operation through synchronisation with the system clock.
The maximum standby current of 300μA can be dramatically cut by user configurable power-down modes such as sleep mode and partial power-down mode. In addition, “MB82DBS04314C” is the first 128M PSRAM in the world that adopts a 32 bit address/data multiplexed bus to realise more than double the data transfer rate compared with existing products, by extension of the data bus width, and reduces the pin-count for easier customer board design.
These sample devices will be available in a monolithic package, and chip or wafer form for embedded applications, including use in multi chip package memory solutions.
This announcement underlines Fujitsu's commitment to the continued development and production of high value-added Application-Specific Memory products, in response to customer requirements.
FCRAM is a trademark of Fujitsu Ltd. All other company/product names mentioned herein are trademarks or registered trademarks of their respective companies.
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