London, July 5 2000 - Fujitsu Microelectronics Europe has announced two
new 64Mbit Flash memories, which offer dual-operation for simultaneous
performance of read/write/erase functions and an industry first FlexBankTM
architecture allowing flexible allocation of data or programs to the memory
The memories have been developed primarily for the latest cellular telephone and
mobile information terminal applications, where high-speed processing and more
frequent re-writing are demanded.
FlexBankTM architecture enables the flexible allocation of data and programs to
banks according to individual system requirements. Additionally, small sector
8Kbyte x 8 blocks are available in two banks to enable customers to locate
start-up programs to suit system requirements, allowing efficient use of all
remaining areas as memory space. Unlike previous generations of dual operation
Flash memories, where each device has four fixed data and programs banks,
the new devices are able to offer unparalleled design flexibility, enabling just
one memory type to be used for a multitude of applications or design upgrades,
reducing stock holding and cost.
Organised as either 4MB x 16 bit or 8MB x 8 bit, the devices offer two banks of
8Mbit (banks A and D) and two banks of 24Mbit (banks B and C).
Additional features include a 256byte Hi-ROM (Hidden Read Only Memory)
function to prevent illegal copying and an accelerator facility, which realises
faster write time.
Manufactured in Fujitsu’s 0.23 micron CMOS process technology and featuring
a two-layer polysilicon NOR type memory cell structure, the devices operate from
a single nominal 3.0 volt power supply. The MBM29DD640E, a version which offers
optional address access times of 100ns or 120ns, is designed to operate down to
2.3 volts supply voltage. The MBM29DL640E variant is available in address access
times of 80ns, 90ns and 120ns. All devices provide an automatic sleep mode
function which realises a stand-by current consumption of just 1µA. Consumption in
read operation is 16mA in byte mode at 5MHz and in write/erase mode a current
consumption of only 35mA makes for very efficient use of battery power.
Erase/write operational life is 100,000 cycles minimum.
Housed in standard 48 pin plastic TSOP or 63 ball FBGA packages, the new
Flash memories are now sampling with volume quantities anticipated to be
available in September this year.
Fujitsu’s portfolio of dual operation Flash memory products encompasses 4, 8, 16
and 32Mbit densities. The company is moving ahead rapidly with development of
Flash memory devices with higher capacity and reduced power consumption, as
well as the flexibility to match customer’s varied system design requirements.
TM FlexBank is a trademark of Fujitsu Ltd.
ISSUED ON BEHALF OF:
Fujitsu Microelectronics Europe
Am Siebenstein 6-10
Contact: Ines Polak
MORE INFORMATION FROM:
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Contact: Frank Cornell
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