Fujitsu Introduces new 0.35µ BiCMOS process for Mobile Communications Tuesday 21 November 2000 PDF Print November 21st 2000. Fujitsu Microelectronics Europe GmbH (FME) has announced the development of its new 30GHz BiCMOS process (UESBIC4) for Mobile Communications and Wireless applications. With UESBIC4, the MB15Hxxx series allows the design of complex RF LSIs (RF-IC) with double the performance in comparison with former BiCMOS processes. The increased technological demand on semiconductors for Wireless, Mobile Phone, WLAN and Satellite communication applications is now able to be fully addressed with Fujitsu’s new UESBIC4 technology. In particular, the 3rd Generation mobile phones (WCDMA) is the key market area, where focus is on low power consuming devices at high performance levels. The transistors in the bipolar section are characterised by a "U-groove" isolated double-polySi Emitter Base self aligned structure, which has dramatically improved the high frequency performance. This means Fujitsu is now able to extend the operating frequency range far over 3GHz. Using bipolar transistor widths down to 0.2µm, with a transit frequency (ft) of 30GHz, a noise figure (NF) of 0.6dB can be achieved. The CMOS gate length is 0.35µm, offering small sized logic areas implemented on UESBIC4 devices. In state of the art Wireless ICs, one requirement is the application of high-density placement of circuit elements. Fujitsu uses the trench isolation technique in its BiCMOS processes in order to minimise crosstalk and allow suitable functioning in high frequency circuits. The new thin MIM (metal-insulator-metal) capacitor offers a leading edge capacitance of 2.8fF per square micrometer. On-chip inductors complement the circuits for low system cost. In addition to this, the power consumption has been reduced by up to 33% compared to the former UESBIC3 process (ft=22GHz). In 1988 Fujitsu originally introduced BiCMOS LSIs for addressing wireless applications. The new UESBIC4 process is the 4th generation of the continuously improved BiCMOS line from the company. The high integration level at UESBIC4 enables Fujitsu to offer competitive devices for future markets, like W-CDMA, Bluetooth, ISM and Wireless Internet etc. Based on the new technology, Fujitsu has launched a new line-up of standard PLL-ICs, the UL-series, which is currently running in mass production. FME’s Wireless Design Centre (EWDC), located in Frankfurt, Europe, provides the definition and circuit design for RF application semiconductors, using the new BiCMOS process. Due to the compatibility of design tools, the EWDC can implement the latest Standard PLL functionality into any kind of System-LSI for wireless applications. ISSUED ON BEHALF OF: Fujitsu Microelectronics Europe Am Siebenstein 6-10 D-63303 Dreieich-Buchschlag Germany Tel: +49-6103-690257 Fax: +49-6103-690122 E-mail: firstname.lastname@example.org Contacts: Ines Polak MORE INFORMATION FROM: JDK Marketing Communications The Old Granary Squerryes Goodley Stock Road Westerham, Kent TN16 1SL Tel: 01959 562772 Fax: 01959 562800 E-mail: email@example.com Joanna Muggeridge This product information is also available on the WWW at: http://www.fujitsu-fme.com/news/press/start.php3 Further information on Fujitsu Microelectronics Europe’s products is available on our new WWW address at: http://www.fujitsu-fme.com This press release was distributed by ResponseSource Press Release Wire on behalf of JDK Marketing Communications in the following categories: Consumer Technology, Personal Finance, Business & Finance, Computing & Telecoms, for more information visit https://pressreleasewire.responsesource.com/about.